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PDF FMMT558 Data sheet ( Hoja de datos )
| Número de pieza | FMMT558 | |
| Descripción | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FMMT558 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL 558
FMMT558
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-400
-400
-5
-500
-150
-200
500
-55 to +150
V
V
V
mA
mA
mA
mW
°C
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400
V IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO) -400
V IC=-10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
V(BR)EBO
ICBO; ICES
IEBO
VCE(sat)
-5
VBE(sat)
V
-100 nA
-100 nA
-0.2 V
-0.5 V
-0.9 V
IE=-100µA
VCB=-320V; V+-=320V
VEB=-4V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-6mA *
IC=-50mA, IB=-5mA *
Base-Emitter Turn On Voltage
VBE(on)
-0.9 V
IC=-50mA, VCE=-10V *
Static Forward Current Transfer
Ratio
hFE
100
100 300
15
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V *
IC=-100mA, VCE =-10V*
Transition Frequency
fT 50
MHz
IC=-10mA, VCE=-20V
f=20MHz
Collector-Base Breakdown
Voltage
Cobo
5 pF VCB =-20V, f=1MHz
Switching times
ton 95 ns
toff 1600 ns
*SpMiceeapsuarreadmuentedredraptualisseadvcaoilnadbilteiounpso. nPurelsqeuwesidt tfho=r3th00isµds.eDviuctey cycle ≤2%
IC=-50mA, VCE=-100V
IB1=5mA, IB2=-10mA
3 - 133
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT558.PDF ] | |
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