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PDF FMMT5179 Data sheet ( Hoja de datos )
| Número de pieza | FMMT5179 | |
| Descripción | NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* High fT=900MHz Min
* Max capacitance=1pF
* Low noise 4.5dB
PARTMARKING DETAIL - 179
FMMT5179
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20 V
Collector-Emitter Voltage
VCEO
12 V
Emitter-Base Voltage
VEBO
2.5 V
Continuous Collector Current IC 50 mA
Power Dissipation
Ptot 330 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Sustaining VCEO(SUS) 12
Voltage
V IC= 3mA, IB=0
Collector-Base Breakdown
Voltage
Emitter-Base Breakdown
Voltage
V(BR)CBO
V(BR)EBO
20
2.5
V IC= 1µA, IE=0
V IE=10µA, IC=0
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
ICBO
0.02
µA VCB=15V, IE=0
1.0 µA VCB=15V, IE=0, Tamb=150°C
hFE 25 250
IC=3mA, VCE=1V
Collector-Emitter Saturation VCE(sat)
Voltage
0.4 V IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0 V IC=10mA, IB=1mA
Transition Frequency fT 900 2000
Collector-Base Capacitance Ccb
1
Small Signal Current Gain
hfe
25 300
Collector Base Time Constant rbCc
3
14
Noise Figure
NF
4.5
Common-Emitter Amplifier
Power Gain
Gpe
15
Spice parameter data is available upon request for this device
MHz
pF
ps
dB
dB
IC=5mA, VCE=6V, f=100MHz
IE=0, VCB=10V, f=1MHz
IC=2mA, VCE=6V, f=1KHz
IE=2mA, VCB=6V, f=31.9MHz
IC=1.5mA, VCE=6V
RS=50Ω, f=200MHz
IC=5mA, VCE=6V
f=200MHz
3 - 169
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT5179.PDF ] | |
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