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PDF FMMT491A Data sheet ( Hoja de datos )
| Número de pieza | FMMT491A | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* Very Low Equivalent Resistance, RCE(sat) 195mΩ at 1A
FMMT491A
E
C
COMPLEMENTARY TYPE FMMT591A
PARTMARKING DETAIL 41A
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
40
40
5
1
2
500
-55 to +150
V
V
V
A
A
mW
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 40
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 40
V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V IE=100µA
Cut-Off Currents
ICBO ,ICES
100 nA
VCB=30V,VCES=30V
Emitter Cut-Off Current
IEBO
100 nA
VEB=4V
Saturation Voltages
VCE(sat)
0.3 V
0.5 V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
VBE(sat)
Base Emitter Turn On Voltage VBE(on)
1.1 V
1.0 V
IC=1A, IB=100mA*
IC=1A, VCE=5V*
Static Forward Current
Transfer Ratio
hFE 300
300 900
200
35
IC=1mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transition Frequency
fT 150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
10 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 117
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT491A.PDF ] | |
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