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PDF FMMT449 Data sheet ( Hoja de datos )
| Número de pieza | FMMT449 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FMMT449 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A
COMPLEMENTARY TYPE FMMT549
PARTMARKING DETAIL 449
FMMT449
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50 V
Collector-Emitter Voltage
VCEO
30 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 2 A
Continuous Collector Current
IC
1A
Base Current
IB 200 mA
Power Dissipation at Tamb= 25°C
Ptot
500 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50
V IC=1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30
V IC=10mA, IB=0*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V IE=100µA, IC=0
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
0.1
10
0.1
0.5
1.0
1.25
µA
µA
µA
V
V
V
VCB=40V, IE=0
VCB=40V, Tamb=100°C
VEB=4V, IC=0
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
1.0 V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
Transition
Frequency
fT
70
100 300
80
40
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
150 MHz IC=50mA, VCE=10V
f=100mHz
Output Capacitance
Cobo
15 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 106
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT449.PDF ] | |
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