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PDF FMMT4401-1L Data sheet ( Hoja de datos )
| Número de pieza | FMMT4401-1L | |
| Descripción | SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
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SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 FEBRUARY 1997
7
FMMT4400
FMMT4401
PARTMARKING DETAILS:
FMMT4400 - 1KZ
FMMT4401 - 1L
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60 V
Collector-Emitter Voltage
VCEO
40 V
Emitter-Base Voltage
VEBO
6V
Continuous Collector Current
IC
600 mA
Power Dissipation at Tamb=25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4400 FMMT4401
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS
Collector-Emitter
V(BR)CEO
Breakdown Voltage
40
40
V IC=1mA, IB=0
Collector-Base
V(BR)CBO
Breakdown Voltage
60
60
V IC=0.1mA, IE=0
Emitter-Base
V(BR)EBO
Breakdown Current
6
6
V IE=0.1mA, IC=0
Collector-Emitter
Cut-Off Current
Base Cut-Off
Current
Static Forward
Current
TransferRatio
ICEX
IBEX
hFE
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
VCE(sat)
VBE(sat)
fT
0.1
0.1
20
40
50 150
20
0.4
0.75
0.75 0.95
1.2
200
20
40
80
100
40
0.75
250
0.1 µA VCE=35V
VEB(off) =0.4V
0.1 µA VCE=35V
VEB(off) =3V
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
300 IC=150mA, VCE=1V*
IC=500mA, VCE=2V*
0.4 V IC=150mA,IB=15mA*
0.75 V IC=500mA,IB=50mA*
0.95 V IC=150mA,IB=15mA*
1.2 V IC=500mA,IB=50mA*
MHz IC=20mA,VCE=10V
f=100kHz
Output Capacitance Cobo
6.5 6.5 pF VCB=5 V,IE=0
f=100kHz
Input Capacitance Cibo
30 30 pF VBE=0.5V, IC=0
f=100kHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
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