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Número de pieza | M27C2001-10F6X | |
Descripción | 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! M27C2001
2 Mbit (256Kb x 8) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s FAST ACCESS TIME: 55ns
s LOW POWER CONSUMPTION:
– Active Current 30mA at 5MHz
– Standby Current 100µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 100µs/byte (typical)
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 61h
DESCRIPTION
The M27C2001 is a high speed 2 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large pro-
grams and is organised as 262,144 by 8 bits.
The FDIP32W (window ceramic frit-seal package)
and LCCC32W (leadless chip carrier package)
have a transparent lids which allow the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C2001 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
Table 1. Signal Names
A0-A17
Address Inputs
Q0-Q7
Data Outputs
E Chip Enable
G Output Enable
P Program
VPP Program Supply
VCC Supply Voltage
VSS Ground
32
1
FDIP32W (F)
32
1
PDIP32 (B)
LCCC32W (L)
PLCC32 (K)
Figure 1. Logic Diagram
TSOP32 (N)
8 x 20 mm
VCC VPP
18
A0-A17
8
Q0-Q7
P M27C2001
E
G
VSS
AI00716B
April 1999
1/16
1 page M27C2001
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
ILO Output Leakage Current
ICC Supply Current
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
ICC1 Supply Current (Standby) TTL
ICC2 Supply Current (Standby) CMOS
IPP Program Current
VIL Input Low Voltage
E = VIH
E > VCC – 0.2V
VPP = VCC
–0.3
VIH (2) Input High Voltage
2
VOL Output Low Voltage
IOL = 2.1mA
Output High Voltage TTL
VOH
Output High Voltage CMOS
IOH = –400µA
IOH = –100µA
2.4
VCC – 0.7V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Max
±10
±10
30
1
100
10
0.8
VCC + 1
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
M27V2001
Symbol Alt
Parameter
Test Condition -55 (3)
-70
-80
-90 Unit
Min Max Min Max Min Max Min Max
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
55
70
80
90 ns
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
55 70 80 90 ns
tGLQV
tOE
Output Enable Low
to Output Valid
E = VIL
30 35 40 40 ns
tEHQZ (2)
tDF
Chip Enable High to
Output Hi-Z
G = VIL
0 30 0 30 0 30 0 30 ns
tGHQZ (2)
tDF
Output Enable High
to Output Hi-Z
E = VIL
0 30 0 30 0 30 0 30 ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
0
0
0
0
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. In case of 45ns speed see High Speed AC measurament conditions.
5/16
5 Page M27C2001
Table 12. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
mm inches
Symb
Typ Min Max Typ Min Max
A 5.72 0.225
A1 0.51 1.40
0.020
0.055
A2 3.91 4.57
0.154
0.180
A3 3.89 4.50
0.153
0.177
B
0.41 0.56
0.016
0.022
B1 1.45
–
– 0.057 –
–
C
0.23 0.30
0.009
0.012
D
41.73
42.04
1.643
1.655
D2 38.10
–
– 1.500 –
–
E 15.24
–
– 0.600 –
–
E1
13.06
13.36
0.514
0.526
e 2.54
–
– 0.100 –
–
eA 14.99
–
– 0.590 –
–
eB
16.18
18.03
0.637
0.710
L 3.18
0.125
S
1.52 2.49
0.060
0.098
∅ 7.11
–
– 0.280 –
–
α 4° 11°
4° 11°
N 32
32
Figure 8. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Outline
A2 A3 A
A1 L
B1 B e
D2
S
N
D
∅
E1 E
1
Drawing is not to scale.
α
C
eA
eB
FDIPW-a
11/16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet M27C2001-10F6X.PDF ] |
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