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M27W401-120XN6TR fiches techniques PDF

STMicroelectronics - 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM

Numéro de référence M27W401-120XN6TR
Description 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M27W401-120XN6TR fiche technique
M27W401
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
s 2.7V to 3.6V LOW VOLTAGE in READ
OPERATION
s ACCESS TIME:
– 70ns at VCC = 3.0V to 3.6V
– 80ns at VCC = 2.7V to 3.6V
s PIN COMPATIBLE with M27C4001
s LOW POWER CONSUMPTION:
– 15µA max Standby Current
– 15mA max Active Current at 5MHz
s PROGRAMMING TIME 100µs/byte
s HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 41h
32
1
FDIP32W (F)
32
1
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
DESCRIPTION
The M27W401 is a low voltage 4 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organised as 524,288 by 8
bits.
The M27W401 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W401 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
VCC VPP
19
A0-A18
8
Q0-Q7
E M27W401
G
VSS
AI01590
March 2000
1/15

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