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M27W400-100XK6TR fiches techniques PDF

STMicroelectronics - 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

Numéro de référence M27W400-100XK6TR
Description 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M27W400-100XK6TR fiche technique
M27W400
4 Mbit (512Kb x8 or 256Kb x16)
Low Voltage UV EPROM and OTP EPROM
s 2.7 to 3.6V LOW VOLTAGE in READ
OPERATION
s READ ACCESS TIME:
– 80ns at VCC = 3.0 to 3.6V
– 100ns at VCC = 2.7 to 3.6V
s BYTE-WIDE or WORD-WIDE
CONFIGURABLE
s 4 Mbit MASK ROM REPLACEMENT
s LOW POWER CONSUMPTION
– Active Current 20mA at 8MHz
– Stand-by Current 15µA
s PROGRAMMING VOLTAGE: 12.5V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B8h
DESCRIPTION
The M27W400 is a low voltage 4 Mbit EPROM of-
fered in the two range UV (Ultra Violet Erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 512
Kwords of 8 bit or 256 Kwords of 16 bit. The pin-
out is compatible with the most common 4 Mbit
Mask ROM.
The M27W400 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W400 is offered in PDIP40 and PLCC44 pack-
ages.
40
1
FDIP40W (F)
40
1
PDIP40 (B)
PLCC44 (K)
Figure 1. Logic Diagram
VCC
18
A0-A17
E
G
BYTEVPP
M27W400
Q15A–1
15
Q0-Q14
VSS
AI03096
January 2000
1/15

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