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M27W101-100K6TR fiches techniques PDF

STMicroelectronics - 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM

Numéro de référence M27W101-100K6TR
Description 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M27W101-100K6TR fiche technique
M27W101
1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM
s 2.7V to 3.6V LOW VOLTAGE in READ
OPERATION
s ACCESS TIME:
– 70ns at VCC = 3.0V to 3.6V
– 80ns at VCC = 2.7V to 3.6V
s PIN COMPATIBLE with M27C1001
s LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
– Standby Current 15µA
s PROGRAMMING TIME 100µs/byte
s HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 05h
DESCRIPTION
The M27W101 is a low voltage 1 Mbit EPROM of-
fered in two range UV (ultra violet erase) and OTP
(one time programmable). It is ideally suited for mi-
croprocessor systems requiring large data or pro-
gram storage and is organized as 131,072 by 8
bits.
The M27W101 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85 °C tem-
perature range.
The decrease in operating power allows either a
reduction of the size of the battery or an increase
in the time between battery recharges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W101 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
32
1
FDIP32W (F)
32
1
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC VPP
17
A0-A16
8
Q0-Q7
P M27W101
E
G
VSS
AI01587
April 2000
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