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M27V801-180N6TR fiches techniques PDF

STMicroelectronics - 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM

Numéro de référence M27V801-180N6TR
Description 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M27V801-180N6TR fiche technique
M27V801
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM
s LOW VOLTAGE READ OPERATION:
3V to 3.6V
s FAST ACCESS TIME: 120ns
s LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
– Standby Current 20µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 100µs/byte (typical)
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 42h
DESCRIPTION
The M27V801 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organized as 1,048,576 by
8 bits.
The M27V801 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP32W (window ceramic frit-seal package)
has transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
Table 1. Signal Names
A0-A19
Address Inputs
Q0-Q7
Data Outputs
E Chip Enable
GVPP
Output Enable / Program Supply
VCC Supply Voltage
VSS Ground
32
1
FDIP32W (F)
32
1
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC
20
A0-A19
8
Q0-Q7
E
GVPP
M27V801
VSS
AI01902
May 1998
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