M27V160-200M6TR Datasheet PDF - STMicroelectronics
| Part Number | M27V160-200M6TR | |
| Description | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM | |
| Manufacturers | STMicroelectronics | |
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M27V160
16 Mbit (2Mb x8 or 1Mb x16)
Low Voltage UV EPROM and OTP EPROM
s 3V to 3.6V LOW VOLTAGE in READ
OPERATION
s ACCESS TIME: 100ns
s BYTE-WIDE or WORD-WIDE
CONFIGURABLE
s 16 Mbit MASK ROM REPLACEMENT
s LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 60µA
s PROGRAMMING VOLTAGE: 12.5V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B1h
DESCRIPTION
The M27V160 is a low voltage 16 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 2 Mbit
words of 8 bit or 1 Mbit words of 16 bit. The pin-out
is compatible with a 16 Mbit Mask ROM.
The M27V160 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27V160 is offered in PDIP42 and SO44 packag-
es.
42
1
FDIP42W (F)
44
1
SO44 (M)
42
1
PDIP42 (B)
Figure 1. Logic Diagram
VCC
20
A0-A19
E
G
BYTEVPP
M27V160
Q15A–1
15
Q0-Q14
VSS
AI01898
March 2000
1/15
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M27V160
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70°C or –40 to 85°C; VCC = 3.3V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
ILO Output Leakage Current
ICC Supply Current
ICC1 Supply Current (Standby) TTL
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
E = VIL, G = VIL, IOUT = 0mA,
f = 8MHz, VCC ≤ 3.6V
E = VIL, G = VIL, IOUT = 0mA,
f = 5MHz, VCC ≤ 3.6V
E = VIH
ICC2 Supply Current (Standby) CMOS
IPP Program Current
E > VCC – 0.2V, VCC ≤ 3.6V
VPP = VCC
VIL Input Low Voltage
–0.3
VIH (2) Input High Voltage
0.7VCC
VOL Output Low Voltage
IOL = 2.1mA
VOH Output High Voltage TTL
IOH = –400µA
2.4
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Max
±1
±10
30
20
1
60
10
0.2VCC
VCC + 1
0.4
Unit
µA
µA
mA
mA
mA
µA
µA
V
V
V
V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
supplies to the devices. The supply current ICC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E. The magnitude of the
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device out-
puts. The associated transient voltage peaks can
be suppressed by complying with the two line out-
put control and by properly selected decoupling
capacitors. It is recommended that a 0.1µF ceram-
ic capacitor is used on every device between VCC
and VSS. This should be a high frequency type of
low inherent inductance and should be placed as
close as possible to the device. In addition, a
4.7µF electrolytic capacitor should be used be-
tween VCC and VSS for every eight devices. This
capacitor should be mounted near the power sup-
ply connection point. The purpose of this capacitor
is to overcome the voltage drop caused by the in-
ductive effects of PCB traces.
5/15
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