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M27V160-100B1TR fiches techniques PDF

STMicroelectronics - 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

Numéro de référence M27V160-100B1TR
Description 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M27V160-100B1TR fiche technique
M27V160
16 Mbit (2Mb x8 or 1Mb x16)
Low Voltage UV EPROM and OTP EPROM
s 3V to 3.6V LOW VOLTAGE in READ
OPERATION
s ACCESS TIME: 100ns
s BYTE-WIDE or WORD-WIDE
CONFIGURABLE
s 16 Mbit MASK ROM REPLACEMENT
s LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 60µA
s PROGRAMMING VOLTAGE: 12.5V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B1h
DESCRIPTION
The M27V160 is a low voltage 16 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 2 Mbit
words of 8 bit or 1 Mbit words of 16 bit. The pin-out
is compatible with a 16 Mbit Mask ROM.
The M27V160 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27V160 is offered in PDIP42 and SO44 packag-
es.
42
1
FDIP42W (F)
44
1
SO44 (M)
42
1
PDIP42 (B)
Figure 1. Logic Diagram
VCC
20
A0-A19
E
G
BYTEVPP
M27V160
Q15A–1
15
Q0-Q14
VSS
AI01898
March 2000
1/15

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