M27V102-100B1TR Datasheet PDF - STMicroelectronics
| Part Number | M27V102-100B1TR | |
| Description | 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
| Manufacturers | STMicroelectronics | |
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M27V102
1 Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM
LOW VOLTAGE READ OPERATION:
3V to 3.6V
FAST ACCESS TIME: 90ns
LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
– Standby Current 20µA
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
PROGRAMMING TIME: 100µs/byte (typical)
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 008Ch
40
1
FDIP40W (F)
40
1
PDIP40 (B)
DESCRIPTION
The M27W102 is a low voltage 1 Mbit EPROM
offeredin the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organized as 65,536 words
by 16 bits.
The M27V102 operates in the read mode with a
supply voltage as low as 3V. The decrease in
operating power allows either a reduction of the
size of the battery or an increase in the time be-
tween battery recharges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to
expose the chip to ultraviolet light to erase the bit
pattern. A new pattern can then be written to the
device by following the programming procedure.
PLCC44 (K)
TSOP40 (N)
10 x 14mm
Figure 1. Logic Diagram
VCC VPP
16
A0-A15
16
Q0-Q15
Table 1. Signal Names
A0 - A15
Address Inputs
Q0 - Q15
Data Outputs
E Chip Enable
G Output Enable
P Program
VPP Program Supply
VCC Supply Voltage
VSS Ground
P M27V102
E
G
VSS
AI01912
May 1998
1/15
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M27V102
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 3.3V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
ILO Output Leakage Current
ICC Supply Current
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
E = VIL, G = VIL, IOUT = 0mA,
f = 5MHz, VCC ≤ 3.6V
ICC1 Supply Current (Standby) TTL
E = VIH
ICC2
Supply Current (Standby)
CMOS
E > VCC – 0.2V, VCC ≤ 3.6V
IPP Program Current
VPP = VCC
VIL
VIH (2)
Input Low Voltage
Input High Voltage
–0.3
2
VOL Output Low Voltage
IOL = 2.1mA
VOH Output High Voltage TTL
Output High Voltage CMOS
IOH = –400µA
IOH = –100µA
2.4
VCC – 0.7V
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V
Max
±10
±10
15
1
20
10
0.8
VCC + 1
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 3.3V ± 10%; VPP = VCC)
Symbol Alt
Parameter
Test Condition
M27V102
-90 (3)
-100
Min Max Min Max
tAVQV tACC Address Valid to Output Valid
E = VIL, G = VIL
90
tELQV
tCE Chip Enable Low to Output Valid
G = VIL
90
tGLQV
tEHQZ (2)
tGHQZ (2)
tOE Output Enable Low to Output Valid
tDF Chip Enable High to Output Hi-Z
tDF Output Enable High to Output Hi-Z
E = VIL
G = VIL
E = VIL
45
0 30
0 30
tAXQX
tOH Address Transition to Output Transition E = VIL, G = VIL 0
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
0
0
0
100
100
50
30
30
Unit
ns
ns
ns
ns
ns
ns
5/15
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