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What is M27C801-45N6TR?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "8 Mbit 1Mb x 8 UV EPROM and OTP EPROM".


M27C801-45N6TR Datasheet PDF - STMicroelectronics

Part Number M27C801-45N6TR
Description 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME: 45ns
s LOW POWER CONSUMPTION:
– Active Current 35mA at 5MHz
– Standby Current 100µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 42h
DESCRIPTION
The M27C801 is an 8 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for applica-
tions where fast turn-around and pattern experi-
mentation are important requirements and is
organized as 1,048,576 by 8 bits.
The FDIP32W (window ceramic frit-seal package)
has transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C801 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
32
1
FDIP32W (F)
32
1
PDIP32 (B)
PLCC32 (C)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC
20
A0-A19
8
Q0-Q7
E
GVPP
M27C801
VSS
AI01267
March 2000
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M27C801-45N6TR equivalent
M27C801
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 10%)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
0V VIN VCC
ILO Output Leakage Current
0V VOUT VCC
ICC Supply Current
E = VIL, GVPP = VIL,
IOUT = 0mA, f = 5MHz
ICC1 Supply Current (Standby) TTL
E = VIH
ICC2 Supply Current (Standby) CMOS
E > VCC – 0.2V
IPP Program Current
VPP = VCC
VIL Input Low Voltage
–0.3
VIH (2) Input High Voltage
2
VOL Output Low Voltage
IOL = 2.1mA
Output High Voltage TTL
VOH
Output High Voltage CMOS
IOH = –1mA
IOH = –100µA
3.6
VCC – 0.7
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Max
±10
±10
35
1
100
10
0.8
VCC + 1
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 10%)
Symbol Alt
Parameter
Test
Cond ition
M27C801
-45 (3)
-60
Min Max Min Max
tAVQV tACC Address Valid to Output Valid
E = VIL,
GVPP = VIL
45
60
tELQV tCE Chip Enable Low to Output Valid GVPP = VIL
45
60
tGLQV tOE Output Enable Low to Output Valid E = VIL
25 30
tEHQZ (2) tDF Chip Enable High to Output Hi-Z GVPP = VIL 0 25 0 25
tGHQZ (2) tDF Output Enable High to Output Hi-Z
E = VIL
0 25 0 25
tAXQX
tOH
Address Transition to Output
Transition
E = VIL,
GVPP = VIL
0
0
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
-70 Unit
Min Max
70 ns
70 ns
35 ns
0 30 ns
0 30 ns
0 ns
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
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M27C801-45N6TRThe function is 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM. STMicroelectronicsSTMicroelectronics

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