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M27C800-70K6TR fiches techniques PDF

STMicroelectronics - 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM

Numéro de référence M27C800-70K6TR
Description 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M27C800-70K6TR fiche technique
M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME: 50ns
s BYTE-WIDE or WORD-WIDE
CONFIGURABLE
s 8 Mbit MASK ROM REPLACEMENT
s LOW POWER CONSUMPTION
– Active Current 70mA at 8MHz
– Stand-by Current 50µA
s PROGRAMMING VOLTAGE: 12.5V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B2h
DESCRIPTION
The M27C800 is an 8 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systems requiring large data or program
storage. It is organised as either 1 Mwords of 8 bit
or 512 Kwords of 16 bit. The pin-out is compatible
with the most common 8 Mbit Mask ROM.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern.
A new pattern can then be written rapidly to the de-
vice by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C800 is offered in PDIP42, PLCC44 and
SO44 packages.
42
1
FDIP42W (F)
42
1
PDIP42 (B)
PLCC44 (K)
44
1
SO44 (M)
Figure 1. Logic Diagram
VCC
19
A0-A18
E
G
BYTEVPP
M27C800
Q15A–1
15
Q0-Q14
VSS
AI01593
January 2000
1/17

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