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STMicroelectronics - 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory

Numéro de référence M28F512
Description 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M28F512 fiche technique
M28F512
512K (64K x 8, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 90ns
LOW POWER CONSUMPTION
– Standby Current: 100µA Max
10,000 ERASE/PROGRAM CYCLES
12V PROGRAMMING VOLTAGE
TYPICAL BYTE PROGRAMING TIME 10µs
(PRESTO F ALGORITHM)
ELECTRICAL CHIP ERASE in 1s RANGE
INTEGRATED ERASE/PROGRAM-STOP
TIMER
EXTENDED TEMPERATURE RANGES
32
1
PDIP32 (B)
PLCC32 (C)
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or-
ganised as 64K bytes of 8 bits. It uses a command
register architecture to select the operating modes
and thus provides a simple microprocessor inter-
face. The M28F512 FLASH Memory is suitable for
applications where the memory has to be repro-
grammed in the equipment. The access time of
90ns makes the device suitable for use in high
speed microprocessor systems.
Figure 1. Logic Diagram
VCC VPP
16
A0-A15
8
DQ0-DQ7
Table 1. Signal Names
A0 - A15
Address Inputs
DQ0 - DQ7
Data Inputs / Outputs
E Chip Enable
G Output Enable
W Write Enable
VPP Program Supply
VCC Supply Voltage
VSS Ground
March 1996
W M28F512
E
G
VSS
AI00548B
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