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EPA480C-SOT89 fiches techniques PDF

ETC - DC-6GHz High Efficiency Heterojunction Power FET

Numéro de référence EPA480C-SOT89
Description DC-6GHz High Efficiency Heterojunction Power FET
Fabricant ETC 
Logo ETC 





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EPA480C-SOT89 fiche technique
Excelics
EPA480C-SOT89
DATA SHEET
DC-6GHz High Efficiency Heterojunction Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+36dBm TYPICAL OUTPUT POWER
13.0dB TYPICAL POWER GAIN AT 2GHz
0.5dB TYPICAL NOISE FIGURE AT 2GHz
+43dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT
POINT AT 2GHz


$ &#

0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY
AND HIGH RELIABILITY


 
Applications
Analog and Digital Wireless System
High Dynamic Range LNA
HPA
(Top View)
All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
P1dB
G1dB
PAE
NF
IP3
Idss
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=750mA
f = 2GHz
Gain at 1dB Compression
f = 2GHz
Vds=8V, Ids=750mA
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=750mA
f = 2GHz
Noise Figure
Vds=5V, Ids=300mA
f = 2GHz
Vds=5-8V, Ids=750mA
Output 3rd Order Intercept Point
f = 2GHz
Vds=5-8V, Ids=750mA
Vds=5V, Ids=300mA
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=14mA
BVgd
Drain Breakdown Voltage Igd=4.8mA
BVgs
Source Breakdown Voltage Igs=4.8mA
Rth Thermal Resistance
* Overall Rth depends on case mounting.
MIN
34.5
11.0
TYP
36.0
13.0
50
MAX
UNIT
dBm
dB
%
0.5 dB
1.2
43 dBm
41
880 1440 1880
mA
960 1560
mS
-1.0 -2.5
V
-11 -15
V
-7 -14
14*
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
12V
8V
Vgs Gate-Source Voltage
-8V
-3V
Ids Drain Current Idss 1.05A
Igsf Forward Gate Current
240mA
40mA
Pin Input Power
Tch Channel Temperature
Tstg Storage Temperature
33dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
10 W
8.4 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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