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What is EPA018BV?

This electronic component, produced by the manufacturer "ETC", performs the same function as "High Efficiency Heterojunction Power FET".


EPA018BV Datasheet PDF - ETC

Part Number EPA018BV
Description High Efficiency Heterojunction Power FET
Manufacturers ETC 
Logo ETC Logo 


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Excelics
DATA SHEET
High Efficiency Heterojunction Power FET
EPA018BV
VERY HIGH fmax: 120GHz
+20.0dBm TYPICAL OUTPUT POWER
13.0dB TYPICAL POWER GAIN AT 18 GHz
TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED
GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION AND VIA HOLE GROUNDING
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 5 mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
P1dB
G1dB
PAE
NF
Ga
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12Ghz
Noise Figure
Vds=2V, Ids=15mA
f=12GHz
Associated Gain
Vds=2V, Ids=15mA
f=12GHz
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
Gm Transconductance
Vds=3V, Vgs=0V
Vp Pinch-off Voltage
Vds=3V, Ids=1.0mA
BVgd
Drain Breakdown Voltage Igd=0.5mA
BVgs
Source Breakdown Voltage Igs=0.5mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MIN
18.0
13.0
30
35
-9
-7
: Via Hole
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
TYP
20.0*
20.0*
14.5
13.0
48
0.75
12.5
MAX
UNIT
dBm
dB
%
dB
dB
55 80 mA
60 mS
-1.0 -2.5
V
-15 V
-14 V
140 oC/W
* P1dB = 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage 12V
6V
Vgs Gate-Source Voltage
-8V
-3V
Ids Drain Current
Idss
Idss
Igsf
Forward Gate Current
9mA
1.5mA
Pin Input Power
16dBm
Tch Channel Temperature 175oC
Tstg Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
950mW
800mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
EPA018BVThe function is High Efficiency Heterojunction Power FET. ETCETC

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