EMZ1DXV6T5 Datasheet PDF - ON Semiconductor
| Part Number | EMZ1DXV6T5 | |
| Description | Dual General Purpose Transistors | |
| Manufacturers | ON Semiconductor | |
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EMZ1DXV6T1,
EMZ1DXV6T5
Product Preview
Dual General Purpose
Transistors
NPN/PNP Dual (Complimentary)
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
• Lead−Free Solder Plating
• Low VCE(SAT), t0.5 V
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad.
RqJA
TJ, Tstg
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Unit
mW
mW/°C
°C/W
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
Q1
(4)
(2)
(5)
(1)
Q2
(6)
654
123
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
3Z D
3Z = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
EMZ1DXV6T1
SOT−563 4 mm Pitch
4000/Tape & Reel
EMZ1DXV6T5
SOT−563 2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. P0
1
Publication Order Number:
EMZ1DXV6/D
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EMZ1DXV6T1, EMZ1DXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE A
A
−X− C
654
12 3
B
−Y−
D 65 PL
G 0.08 (0.003) M X Y
K
S
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 1.50 1.70 0.059 0.067
B 1.10 1.30 0.043 0.051
C 0.50 0.60 0.020 0.024
D 0.17 0.27 0.007 0.011
G 0.50 BSC
0.020 BSC
J 0.08 0.18 0.003 0.007
K 0.10 0.30 0.004 0.012
S 1.50 1.70 0.059 0.067
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDER FOOTPRINT*
0.3
0.0118
1.35
0.0531
1.0
0.0394
0.45
0.0177
0.5 0.5
0.0197 0.0197
ǒ ǓSCALE 20:1
mm
inches
*For information on soldering specifications, please refer to
our Soldering Reference Manual, SOLDERRM/D.
http://onsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMZ1DXV6T5 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ EMZ1DXV6T5.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| EMZ1DXV6T1 | The function is Dual General Purpose Transistors. ON Semiconductor | |
| EMZ1DXV6T5 | The function is Dual General Purpose Transistors. ON Semiconductor | |
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