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Número de pieza | FAN5059 | |
Descripción | High Performance Programmable Synchronous | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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FAN5059
High Performance Programmable Synchronous
DC-DC Controller for Multi-Voltage Platforms
Features
• Programmable output for Vcore from 1.3V to 3.5V using
an integrated 5-bit DAC
• Controls adjustable linears for Vagp (selectable 1.5V/3.3V),
Vclock (2.5V), and Vtt (1.5V) or Vnorthbridge (1.8V)
• Meets VRM specification with as few as 5 capacitors
• Meets 1.550V +40/-70mV over initial tolerance,
temperature and transients
• Remote sense
• Programmable Active Droop™ (Voltage Positioning)
• Drives N-Channel MOSFETs
• Overcurrent protection using MOSFET sensing
• 85% efficiency typical at full load
• Integrated Power Good and Enable/Soft Start functions
• 24 pin SOIC package
Block Diagram
Applications
• Power supply for Pentium® III Camino Platform
• Power supply for Pentium III Whitney Platform
• VRM for Pentium III processor
• Programmable multi-output power supply
Description
The FAN5059 is a synchronous mode DC-DC controller IC
which provides a highly accurate, programmable set of output
voltages for multi-voltage platforms such as the Intel Camino,
and provides a complete solution for the Intel Whitney and other
high-performance processors. The FAN5059 features remote
voltage sensing, independently adjustable current limit, and a
proprietary Programmable Active Droop™ for optimal converter
transient response. The FAN5059 uses a 5-bit D/A converter
to program the output voltage from 1.3V to 3.5V. The
FAN5059 uses a high level of integration to deliver load
+3.3V
9
10
+1.5V
11
+
-
VCCP
+
-
12
+2.5V
OSC
REF
PWRGD,
OCL
REF
PWRGD,
OCL
+5V
VCCA 21
-
+
OCL
-
+
-
+
15
14
13
3.3/1.5V
+V
-
-+
PWRGD, OCL
5-Bit
DAC
1.24V
Reference
8 765 4
VID0VID2 VID4
VID1 VID3
-
+
3
GNDA
Digital
Control
16
ENABLE/SS
Power
Good
19
RD
+12V
18
RS
20
24 VCCP
1 HIDRV
+5V
2
23 LODRV
22
GNDP
17
PWRGD
VCC
Pentium is a registered trademark of Intel Corporation. Programmable Active Droop is a trademark of Fairchild Semiconductor.
Rev. 1.0.4
1 page PRODUCT SPECIFICATION
Table 1. Output Voltage Programming Codes
VID4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
VID3
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
VID2
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
Note:
1. 0 = processor pin is tied to GND.
1 = processor pin is open.
VID1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
VID0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
FAN5059
Nominal VOUT
1.30V
1.35V
1.40V
1.45V
1.50V
1.55V
1.60V
1.65V
1.70V
1.75V
1.80V
1.85V
1.90V
1.95V
2.00V
2.05V
2.0V
2.1V
2.2V
2.3V
2.4V
2.5V
2.6V
2.7V
2.8V
2.9V
3.0V
3.1V
3.2V
3.3V
3.4V
3.5V
REV. 1.0.4 8/14/03
5
5 Page PRODUCT SPECIFICATION
FAN5059
Table 3. FAN5059 Application Bill of Materials for Intel Coppermine/Camino Motherboards
(Typical Design)
Reference Manufacturer Part # Quantity
Description
Requirements/Comments
C1 AVX
TAJB475M010R5
1 4.7µF, 10V Capacitor
C2, C5
Panasonic
ECU-V1C105ZFX
2 1µF, 16V Capacitor
C3-4,C6
Panasonic
ECU-V1H104ZFX
3 100nF, 50V Capacitor
C7-9
Sanyo
6MV1000FA
3 1000µF, 6.3V Electrolytic
C10-12
Any
3 22µF, 6.3V Capacitor Low ESR
CIN Sanyo
10MV1200GX
3 1200µF, 10V Electrolytic IRMS = 2A
COUT
Sanyo
6MV1500GX
12 1500µF, 6.3V Electrolytic ESR ≤ 44mΩ
D1 Motorola
MBRD835L
1 8A Schottky Diode
L1 Any
Optional 2.5µH, 5A Inductor
DCR ~ 10mΩ
See Note 1.
L2 Any
1 1.3µH, 15A Inductor
DCR ~ 3mΩ
Q1
Q2
Q3-5
Fairchild
FDB6030L
Fairchild
FDB7030BL
Fairchild
FDB4030L
1 N-Channel MOSFET RDS(ON) = 20mΩ @
VGS = 4.5V See Note 2.
1 N-Channel MOSFET RDS(ON) = 10mΩ @
VGS = 4.5V See Note 2.
3 N-Channel MOSFET
R1 Any
1 33Ω
R2-3
Any
2 4.7Ω
R4 Any
1 10KΩ
R5, R7
Any
2 6.24KΩ
R6 Any
1 10Ω
R8 N/A
1 3.0mΩ
PCB Trace Resistor
U1 Fairchild
FAN5059M
1 DC/DC Controller
Notes:
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply
with Intel dI/dt requirements. L1 may be omitted if desired.
2. For 12.5A designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For
designs using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET
selections, refer to Applications Bulletins AB-8 and AB-15.
REV. 1.0.4 8/14/03
11
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet FAN5059.PDF ] |
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