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PDF F3002 Data sheet ( Hoja de datos )
| Número de pieza | F3002 | |
| Descripción | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
| Fabricantes | Polyfet RF Devices | |
| Logotipo |  |
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polyfet rf devices
F3002
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"TM process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F t enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
300 Watts Gemini
Package Style AR
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
500 Watts
0.35 oC/W
200 oC
-65oC to 150oC
36 A
70 V
70V 30V
RF CHARACTERISTICS ( 300WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Pow er Gain
12
dB Idq = 4 A, Vds = 28.0 V, F = 100 MHz
η Drain Efficiency
60 % Idq = 4 A, Vds = 28.0 V, F = 100 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 4 A, Vds = 28.0 V, F = 100 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdow n Voltage
65
V Ids = 0.2 A, Vgs = 0V
Idss Zero Bias Drain Current
12 mA Vds = 28.0V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Current
1 7 V Ids = 0.6 A, Vgs = Vds
gM Forw ard Transconductance
7 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.1
Ohm
Vgs = 20V, Ids = 20A
Idsat
Saturation Current
50
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
400 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
40
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
240 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet F3002.PDF ] | |
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