DataSheetWiki


F2004 fiches techniques PDF

Polyfet RF Devices - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Numéro de référence F2004
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Fabricant Polyfet RF Devices 
Logo Polyfet RF Devices 





1 Page

No Preview Available !





F2004 fiche technique
polyfet rf devices
F2004
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
8 Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
60 Watts
3 oC/W
200 oC
-65 oC to 150oC
3.2 A
70 V
70 V 30V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gai
10
η Drain Efficiency
45
VSWR Load Mismatch Toleranc
8WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz
% Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz
20:1 Relative Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.02 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.4 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.04 A, Vgs = Vds
gM Forward Transconductanc
0.4
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
2.1
Ohm
Vgs = 20V, Ids = 2A
Idsat
Saturation Curren
2.4
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
18 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
2 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
12 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com

PagesPages 2
Télécharger [ F2004 ]


Fiche technique recommandé

No Description détaillée Fabricant
F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices
F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices
F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices
F2004 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche