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General Semiconductor - FAST EFFICIENT PLASTIC RECTIFIER

Numéro de référence FESB8CT
Description FAST EFFICIENT PLASTIC RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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FESB8CT fiche technique
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FESB8AT THRU FESB8JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 8.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low leakage, high voltage
High surge current capability
Superfast recovery time, for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
TC=25°C
at rated DC blocking voltage at TC=100°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case mounted on heatsink
SYMBOLS
VRRM
VRMS
VDC
FESB
8AT
50
35
50
FESB FESB FESB FESB
8BT 8CT 8DT 8FT
100 150 200 300
70 105 140 210
100 150 200 300
FESB FESB FESB
8GT 8HT 8JT UNITS
400 500 600 Volts
280 350 420 Volts
400 500 600 Volts
I(AV)
8.0
Amps
IFSM
VF
IR
trr
CJ
RΘJC
TJ, TSTG
125.0
0.95 1.3
10.0
500.0
35.0 50.0
85.0
3.0
-65 to +150
Amps
1.5 Volts
µA
ns
50.0 pF
°C/W
°C
4/98

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