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FESB16GT fiches techniques PDF

General Semiconductor - FAST EFFICIENT PLASTIC RECTIFIER

Numéro de référence FESB16GT
Description FAST EFFICIENT PLASTIC RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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FESB16GT fiche technique
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FESB16AT THRU FESB16JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 16.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
TO-263AB
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low power loss
Low forward voltage, high current capability
High surge current capability
Superfast recovery time, for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body over
passivated chips
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
Maximum instantaneous forward voltage at 16A
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
TC=100°C
Maximum reverse recovery time (NOTE1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr =0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case
FESB
SYMBOLS 16AT
VRRM 50
VRMS 35
VDC 50
FESB FESB
16BT 16CT
100 150
70 105
100 150
FESB
16DT
200
140
200
FESB
16FT
300
210
300
FESB FESB
16GT 16HT
400 500
280 350
400 500
FESB
16JT UNITS
600 Volts
420 Volts
600 Volts
I(AV) 16.0 Amps
IFSM
VF
IR
trr
CJ
RΘJC
TJ, TSTG
250.0
Amps
0.975
35.0
10.0
500.0
1.3
175.0
1.2
-65 to +150
1.5
50.0
145.0
Volts
µA
ns
pF
°C/W
°C
4/98

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