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General Semiconductor - FAST EFFICIENT PLASTIC RECTIFIER

Numéro de référence FES8AT
Description FAST EFFICIENT PLASTIC RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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FES8AT fiche technique
FES8AT THRU FES8JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 8.0 Amperes
TO-220AC
0.160 (4.06)
0.140 (3.56)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
12
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
PIN 1
PIN 2
Dimensions in inches and (millimeters)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
CASE
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low leakage, high voltage
High surge current capability
Superfast recovery time, for high efficiency
High temperature soldering guaranteed:
250°C, 0.16" (4.06mm) from case for 10 seconds
MECHANICAL DATA
Case: JEDEC TO-220AC fully overmolded plastic body over
passivated chip
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Weight: 0.064 ounce, 1.81 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
TC=25°C
at rated DC blocking voltage at TC=100°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
(NOTE 4)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient in free air, no heatsink
(4) Thermal resistance from junction to case mounted on heatsink
FES FES FES FES FES FES FES FES
SYMBOLS 8AT 8BT 8CT 8DT 8FT 8GT 8HT 8JT UNITS
VRRM
50 100 150 200 300 400 500 600 Volts
VRMS
35 70 105 140 210 280 350 420 Volts
VDC 50 100 150 200 300 400 500 600 Volts
I(AV)
8.0
Amps
IFSM
VF
IR
trr
CJ
RΘJA
RΘJC
TJ, TSTG
125.0
0.95 1.3
10.0
500.0
35.0 50.0
85.0
15.0
2.2
-65 to +150
Amps
1.5 Volts
µA
ns
60.0 pF
°C/W
°C
4/98

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