DataSheetWiki


FEPB6 fiches techniques PDF

General Semiconductor - FAST EFFICIENT PLASTIC RECTIFIER

Numéro de référence FEPB6
Description FAST EFFICIENT PLASTIC RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





1 Page

No Preview Available !





FEPB6 fiche technique
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FEPB6AT THRU FEPB6DT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions are in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive center-tap
Glass passivated chip junctions
Superfast recovery times for high efficiency
Low power loss
Low forward voltage, high current capability
For use in low voltage, high frequency inverters,
free wheeling and polarity protection applications
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
TC=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage
per leg at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
TC=100°C
Maximum reverse recovery time per leg (NOTE 1)
Typical thermal resistance (NOTE 2)
Typical junction capacitance per leg (NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, Ir=1.0A, Irr=0.25A
(2) Thermal resistance from junction to case per leg mounted on heatsink
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
SYMBOLS
VRRM
VRMS
VDC
FEPB6AT
50
35
50
FEPB6BT FEPB6CT
100 150
70 105
100 150
FEPB6DT
200
140
200
UNITS
Volts
Volts
Volts
I(AV) 6.0 Amps
IFSM
100.0
Amps
VF
IR
trr
RΘJC
CJ
TJ, TSTG
0.975
5.0
50.0
35.0
3.6
28.0
-55 to +150
Volts
µA
ns
°C/W
pF
°C
4/98

PagesPages 2
Télécharger [ FEPB6 ]


Fiche technique recommandé

No Description détaillée Fabricant
FEPB16AT FAST EFFICIENT PLASTIC RECTIFIER General Semiconductor
General Semiconductor
FEPB16BT FAST EFFICIENT PLASTIC RECTIFIER General Semiconductor
General Semiconductor
FEPB16CT FAST EFFICIENT PLASTIC RECTIFIER General Semiconductor
General Semiconductor
FEPB16DT FAST EFFICIENT PLASTIC RECTIFIER General Semiconductor
General Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche