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PDF FDZ299P Data sheet ( Hoja de datos )
| Número de pieza | FDZ299P | |
| Descripción | P-Channel 2.5 V Specified PowerTrench BGA MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 2004
FDZ299P
P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ299P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –4.6 A, –20 V
RDS(ON) = 55 mΩ @ VGS = –4.5 V
RDS(ON) = 80 mΩ @ VGS = –2.5 V
• Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability.
S
G
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
B
FDZ299P
7”
D
Ratings
–20
±12
–4.6
–10
1.7
–55 to +150
72
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ299P Rev C6 (W)
1 page  
Typical Characteristics
5
ID = -4.6A
4
3
VDS = -5V
-10V
-15V
2
1
0
02468
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON)
10 LIMIT
1
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 157oC/W
TA = 25oC
100us
1ms
10ms
10s 1s100ms
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
800
600
CISS
f = 1MHz
VGS = 0 V
400
200
0
0
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 157°C/W
15 TA = 25°C
10
5
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 157 °C/W
P(pk)
t1
TJ - TA =t2P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ299P Rev C6 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDZ299P.PDF ] | |
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