|
|
Numéro de référence | FDW2521C | ||
Description | Complementary PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
May 2002
FDW2521C
Complementary PowerTrench MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC conversion
• Power management
• Load switch
Features
• Q1: N-Channel
5.5 A, 20 V. RDS(ON) = 21 mΩ @ VGS = 4.5 V
RDS(ON) = 35 mΩ @ VGS = 2.5 V
• Q2: P-Channel
–3.8 A, 20 V. RDS(ON) = 43 mΩ @ VGS = –4.5 V
RDS(ON) = 70 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2521C
FDW2521C
13’’
Q1
1
2
3
4
Q2
8
7
6
5
Q1 Q2
20 –20
±12 ±12
5.5 –3.8
30 –30
1.0
0.6
-55 to +150
Units
V
V
A
W
°C
125 °C/W
208
Tape width
12mm
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDW2521C Rev D(W)
|
|||
Pages | Pages 8 | ||
Télécharger | [ FDW2521C ] |
No | Description détaillée | Fabricant |
FDW2521C | Complementary PowerTrench MOSFET | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |