DataSheetWiki


FDW2521C fiches techniques PDF

Fairchild Semiconductor - Complementary PowerTrench MOSFET

Numéro de référence FDW2521C
Description Complementary PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FDW2521C fiche technique
May 2002
FDW2521C
Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC conversion
Power management
Load switch
Features
Q1: N-Channel
5.5 A, 20 V. RDS(ON) = 21 m@ VGS = 4.5 V
RDS(ON) = 35 m@ VGS = 2.5 V
Q2: P-Channel
–3.8 A, 20 V. RDS(ON) = 43 m@ VGS = –4.5 V
RDS(ON) = 70 m@ VGS = –2.5 V
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2521C
FDW2521C
13’’
Q1
1
2
3
4
Q2
8
7
6
5
Q1 Q2
20 –20
±12 ±12
5.5 –3.8
30 –30
1.0
0.6
-55 to +150
Units
V
V
A
W
°C
125 °C/W
208
Tape width
12mm
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDW2521C Rev D(W)

PagesPages 8
Télécharger [ FDW2521C ]


Fiche technique recommandé

No Description détaillée Fabricant
FDW2521C Complementary PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche