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FDW2507N fiches techniques PDF

Fairchild Semiconductor - Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Numéro de référence FDW2507N
Description Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDW2507N fiche technique
March 2003
FDW2507N
Common Drain N-Channel 2.5V specified PowerTrenchMOSFET
General Description
This monolithic common drain N-Channel MOSFET has
been designed using Fairchild Semiconductor’s
advanced PowerTrench process to optimize the RDS(ON)
@ VGS = 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
Applications
Li-Ion Battery Pack
Features
7.5 A, 20 V.
RDS(ON) = 19 m@ VGS = 4.5 V
RDS(ON) = 23 m@ VGS = 2.5 V
Isolated source and drain pins
High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
Low profile TSSOP-8 package
D
D
D
D
TSSOP-8
G2
S2
G1
S1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2507N
FDW2507N
13’’
1
2
3
4
Ratings
20
±12
7.5
30
1.6
1.1
–55 to +150
77
114
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2003 Fairchild Semiconductor Corporation
FDW2507N Rev C2

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