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FDU8896 fiches techniques PDF

Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDU8896
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDU8896 fiche technique
March 2015
FDD8896 / FDU8896
N-Channel PowerTrench® MOSFET
30V, 94A, 5.7m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 5.7m, VGS = 10V, ID = 35A
• rDS(ON) = 6.8m, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
30
±20
94
85
17
Figure 4
168
80
0.53
-55 to 175
1.88
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. 1.2

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