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PDF FDU6644 Data sheet ( Hoja de datos )
| Número de pieza | FDU6644 | |
| Descripción | 30V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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April 2001
FDD6644/FDU6644
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 67 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (25 nC typical)
• High power and current handling capability
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
30
±16
67
100
68
3.8
1.6
-55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
2.2
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6644
FDD6644
D-PAK (TO-252)
FDU6644
FDU6644
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
75
2001 Fairchild Semiconductor Corporation
FDD/FDU6644 Rev C(W)
1 page  
Typical Characteristics
10
ID = 16A
8
6
VDS = 5V
15V
10V
4
2
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
4000
3500
3000
CISS
f = 1MHz
VGS = 0 V
2500
2000
1500
1000
500
0
0
CRSS
COSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
80
70
60
50
40
30
20
10
0
0.1
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDD/FDU6644 Rev C(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDU6644.PDF ] | |
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