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Número de pieza | FDS7764S | |
Descripción | 30V N-Channel PowerTrench SyncFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDS7764S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! September 2002
FDS7764S
30V N-Channel PowerTrench SyncFET™
General Description
The FDS7764S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS7764S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor drives
Features
• 13.5 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V
RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (25 nC typical)
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SO8SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7764S
FDS7764S
13’’
5
6
7
8
Ratings
30
±16
13.5
50
2.5
1.2
1.0
–55 to +150
50
30
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS7764S Rev D (W)
1 page Typical Characteristics
10
ID = 13.5A
8
6
4
2
0
0 10
VDS = 10V
15V
20V
20 30
Qg, GATE CHARGE (nC)
40
50
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
4000
3200
2400
CISS
f = 1MHz
VGS = 0 V
1600
800
CRSS
COSS
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
P(pk
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10 100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
FDS7764S Rev D (W)
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDS7764S.PDF ] |
Número de pieza | Descripción | Fabricantes |
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