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Fairchild Semiconductor - Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET

Numéro de référence FDS6680
Description Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS6680 fiche technique
April 1998
FDS6680
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Features
11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V
RDS(ON) = 0.015 @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (typical Qg = 19 nC).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
TA = 25oC unless other wise noted
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6680
30
±20
11.5
50
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
FDS6680 Rev.E1

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