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Fairchild Semiconductor - 30V N-Channel PowerTrench MOSFET

Numéro de référence FDS6644
Description 30V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS6644 fiche technique
September 2001
FDS6644
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Features
13 A, 30 V.
RDS(ON) = 8.5 m@ VGS = 10 V
RDS(ON) = 10.5 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
Low gate charge (25 nC typical)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SSSS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6644
FDS6644
13’’
Ratings
30
±16
13
52
2.5
1.4
1.2
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6644 Rev A (W)

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