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PDF FDS6162N7 Data sheet ( Hoja de datos )
| Número de pieza | FDS6162N7 | |
| Descripción | 20V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FDS6162N7 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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May 2003
FDS6162N7
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 23 A, 20 V
RDS(ON) = 3.5 mΩ @ VGS = 4.5 V
RDS(ON) = 5.0 mΩ @ VGS = 2.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6162N7
FDS6162N7
13’’
Ratings
20
± 12
23
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS6162N7 Rev C2 (W)
1 page  
Dimensional Outline and Pad Layout
FDS6162N7 Rev C2 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS6162N7.PDF ] | |
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