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Fairchild Semiconductor - 150V N-Channel PowerTrench MOSFET

Numéro de référence FDS2570
Description 150V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS2570 fiche technique
June 2000
PRELIMINARY
FDS2570
150V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
4A, 150 V.
RDS(ON) = 0.072 @ VGS = 10 V
RDS(ON) = 0.080 @ VGS = 6 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
D
D
D
D
G
SO-8
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS2570
FDS2570
13’’
5
6
7
8
Ratings
150
±20
4
30
2.5
1.2
1.0
-55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS2570 Rev B(W)

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