PDF FDR8521L Data sheet ( Hoja de datos )

Número de pieza	FDR8521L
Descripción	P-Channel MOSFET With Gate Driver For Load Switch Application
Fabricantes	Fairchild Semiconductor
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No Preview Available ! August 2000 FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description This device is designed for configuration as a load switch and is particularly suited for power management in por- table battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package. Applications • Power management • Load switch Features • V DROP = 0.07 V @ V= IN 12 V, I= L 1 A.R(ON) = 0.07 Ω V DROP = 0.115 V @ V= IN 5 V, I= L 1 A.R(ON) = 0.115 Ω. • V DROP = 0.2 V @ V= IN 12 V, I =2.9 L A.R(ON) = 0.07 Ω V DROP = 0.2 V @ V= IN 5 V,I = L 1.8 A.R(ON) = 0.115 Ω. • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model). • High density cell design for extremely low on-resistance. pin 1 SuperSOT TM-8 5VOU T,C1,CO 6VOU T,C1 ,CO R2 7 R2 8 Q2 Q1 4 VIN,R1,Ci 3 R1,R2,C1 2 C1,CO IN 1 VON/OFF See Application Cir cuit EQUIVALENT CIRCUIT VDR OP +- ON/ OFF OUT Absolute Maxim um Ratings TA=25oC unless otherwise noted Symbol VIN V O N/O FF ID PD TJ, Tstg ESD Parameter Input Voltage Range (Note 1) On/Off Voltage Range Load Current - Continuous (Note 2) - Pulsed Maximum Power Dissipation (Note 2) Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human-Body-Model (100pf/1500 Ohm) Ratings 3 - 20 2.5 - 8 2.9 8 0.8 -55 to +150 6 Units V V A W °C kV Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 2) (Note 2) Package Marking and Ordering Information Device Marking Device Reel Size 8521L FDR8521L 13’’ 156 40 Tape width 12mm °C/W °C/W Quantity 3000 units 2000 Fairchild Semiconductor International FDR8521L Rev. C 1 page SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 T P0 D0 E1 K0 Wc B0 F E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 SSOT-8 (12mm) 4.47 +/-0.10 5.00 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.50 +/-0.10 1.75 +/-0.10 10.25 mi n 5.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 20 deg maximum Typical component cavity B0 center line 20 deg maximum component rotation Sketch A (Si de or Front Sectional View) Component Rotation SSOT-8 Reel Configuration: Figur e 4.0 Typical component A0 center line Sketch B (Top View) Component Rotation K0 T Wc Tc 1.37 +/-0.10 0.280 +/-0.150 9.5 +/-0.025 0.06 +/-0.02 0.5mm maximum 0.5mm maximum Sketch C (Top View) Component lateral movement W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA Dim D W3 min 13" Diameter Option W2 max Measured at Hub Tape Size 12mm Reel Option 7" Dia 12mm 13" Dia Dimensions are in inches and millimeters Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 5.906 150 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 DETAIL AA Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 – 0.606 11.9 – 15.4 0.469 – 0.606 11.9 – 15.4 © 1998 Fairchild Semiconductor Corporation July 1999, Rev. C 5 Page

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