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PDF FDR6580 Data sheet ( Hoja de datos )
| Número de pieza | FDR6580 | |
| Descripción | N-Chennal 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 1999
ADVANCE INFORMATION
FDR6580
N-Chennal 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
Load switch
Motor driving
Power Management
Features
11 A, 20 V. RDS(ON) = 0.009 Ω @ VGS = 4.5 V
RDS(ON) = 0.013 Ω @ VGS = 2.5 V.
Low gate charge.
High performance trench technology for extremely
low RDS(ON).
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
S
D
D
S
G
D
TM
SuperSOT -8
D
D
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.6580
FDR6580
13’’
Ratings
20
±8
11
50
1.8
1.0
0.9
-55 to +150
70
20
Tape Width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDR6580, Rev. A
1 page  
SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued
SuperSOT™-8 (FS PKG Code 34, 35)
1:1
Scale 1:1 on letter size paper
Di mensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0416
September 1998, Rev. A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDR6580.PDF ] | |
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