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Fairchild Semiconductor - N-Channel Logic Level PowerTrench MOSFET

Numéro de référence FDP8030L
Description N-Channel Logic Level PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDP8030L fiche technique
November 1999
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrenchMOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
80 A, 30 V.
RDS(ON) = 0.0035 @ VGS = 10 V
RDS(ON) = 0.0045 @ VGS = 4.5 V
Critical DC electrical parameters specified at
elevated temperature
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor
High performance trench technology for extremely
low RDS(ON)
175°C maximum junction temperature rating
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @# TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Ratings
30
±20
80
300
187
1.25
-65 to +175
275
0.8
62.5
S
Units
V
V
A
W
W°C
°C
°C
°C/W
°C/W
1999 Fairchild Semiconductor Corporation
FDP8030L Rev C(W)

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