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Fairchild Semiconductor - 30V N-Channel PowerTrench SyncFET

Numéro de référence FDP6670S
Description 30V N-Channel PowerTrench SyncFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDP6670S fiche technique
September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrench® SyncFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
31 A, 30 V.
RDS(ON) = 8.5 m@ VGS = 10 V
RDS(ON) = 12.5 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (23nC typical)
High performance trench technology for extremely
low RDS(ON) and fast switching
High power and current handling capability
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6670S
FDB6670S
13’’
FDP6670S
FDP6670S
Tube
Ratings
30
±20
62
150
62.5
0.5
–55 to +150
275
2.1
62.5
Tape width
24mm
n/a
S
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
Quantity
800 units
45
©2001 Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)

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