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PDF FDP6035L Data sheet ( Hoja de datos )
| Número de pieza | FDP6035L | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 1998
FDP6035L/FDB6035L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
Features
58 A, 30 V. RRDDSS(O(ONN) )==00.0.01119ΩΩ@@VVGGSS==140.5VV.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
FDP6035L
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
© 1998 Fairchild Semiconductor Corporation
30
±20
58
175
75
0.5
-65 to 175
FDB6035L
2
62.5
Units
V
V
A
W
W/°C
°C
°C/W
°C/W
FDP6035L Rev.B
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDP6035L.PDF ] | |
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