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Fairchild Semiconductor - 60V N-Channel PowerTrench MOSFET

Numéro de référence FDN5630
Description 60V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDN5630 fiche technique
March 2000
FDN5630
60V N-Channel PowerTrenchMOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low RDS(ON) in a small SOT23
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
RDS(ON) specifications. The result is higher overall
efficiency with less board space.
Applications
DC/DC converter
Motor drives
1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V
RDS(ON) = 0.120 @ VGS = 6 V.
Optimized for use in high frequency DC/DC converters.
Low gate charge.
Very fast switching.
SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25 C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
5630
FDN5630
7
GS
Ratings
60
±20
1.7
10
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDN5630 Rev. C

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