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PDF FDJ129 Data sheet ( Hoja de datos )
| Número de pieza | FDJ129 | |
| Descripción | P-Channel -2.5 Vgs Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2004
FDJ129P
P-Channel -2.5 Vgs Specified PowerTrench MOSFET
General Description
This P-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –4.2 A, –20 V.
RDS(ON) = 70 mΩ @ VGS = –4.5 V
RDS(ON) = 120 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC75-6 surface mount
package
G
S
S
SC75-6 FLMP
SSS
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.A
FDJ129P
7’’
Bottom Drain
4
5
6
Ratings
–20
± 12
–4.2
–16
1.6
–55 to +150
77
Tape width
8mm
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDJ129P Rev F1 W)
1 page  
Dimensional Outline and Pad Layout
FDJ129P Rev F1 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDJ129.PDF ] | |
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