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Fairchild Semiconductor - High Conductance Low Leakage Diode

Numéro de référence FDH3595
Description High Conductance Low Leakage Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDH3595 fiche technique
FDH3595
Discrete POWER & Signal
Technologies
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
125
200
500
600
1.0
4.0
-65 to +175
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
MMBD7000*
500
3.33
300
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation

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