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Numéro de référence | FDG6308P | ||
Description | P-Channel 1.8V Specified PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
October 2000
PRELIMINARY
FDG6308P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –0.6 A, –20 V.
RDS(ON) = 0.40 Ω @ VGS = –4.5 V
RDS(ON) = 0.55 Ω @ VGS = –2.5 V
RDS(ON) = 0.80 Ω @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.08
FDG6308P
7’’
Ratings
–20
±8
–0.6
–1.8
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDG6308P Rev B(W)
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Pages | Pages 5 | ||
Télécharger | [ FDG6308P ] |
No | Description détaillée | Fabricant |
FDG6308 | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDG6308P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
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