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PDF FDFC3N108 Data sheet ( Hoja de datos )
| Número de pieza | FDFC3N108 | |
| Descripción | N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2004
FDFC3N108
N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky Diode
General Description
Features
This N-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It is combined with a low forward drop Schottky that is
isolated from the MOSFET, providing a compact power
solution for battery power management and DC/DC
converter applications.
Applications
• Battery management/Charger Application
• DC/DC Conversion
• 3 A, 20 V
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
D2
S1
D1
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Schottky Diode Maximum Ratings
VRRM
Repetitive Peak reverse voltage
IO Average Forward Current
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.108
FDFC3N108
7’’
1
2
3
Ratings
20
±12
3
12
0.96
0.90
0.70
–55 to +150
20
2.0
130
60
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
V
A
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDFC3N108 Rev C (W)
1 page  
Typical Characteristics
6
VGS = 4.5V
5
3.5V
4
2.5V
3.0V
2.0V
3
2
1
1.5V
0
0 0.5 1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
1.8
VGS = 2.0V
1.6
1.4
2.5V
1.2
3.0V
3.5V
4.0
1 V 4.5
V
0.8
0123456
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 3.0A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.18
0.155
ID = 1.5A
0.13
0.105
0.08
TA = 125oC
0.055
TA = 25oC
0.03
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
12
VDS = 5V
10
TA = -55oC
125oC
8
25oC
6
4
2
0
0.5
1 1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDFC3N108 Rev C (W)
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDFC3N108.PDF ] | |
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