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Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDD8878
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD8878 fiche technique
January 2005
FDD8878 / FDU8878
N-Channel PowerTrench® MOSFET
30V, 40A, 15m
Features
rDS(ON) = 15m, VGS = 10V, ID = 35A
rDS(ON) = 18.5m, VGS = 4.5V, ID = 35A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
©2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
1
www.fairchildsemi.com

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