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FDD6680S fiches techniques PDF

Fairchild Semiconductor - 30V N-Channel PowerTrench SyncFET

Numéro de référence FDD6680S
Description 30V N-Channel PowerTrench SyncFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD6680S fiche technique
December 2000
FDD6680S
30V N-Channel PowerTrenchSyncFET
General Description
The FDD6680S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6680A in parallel with a Schottky diode.
Applications
DC/DC converter
Motor Drives
Features
55 A, 30 V
RDS(ON) = 11 m@ VGS = 10 V
RDS(ON) = 17 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
.
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6680S
FDD6680S
13’’
2001 Fairchild Semiconductor Corporation
D
G
S
Ratings
30
±20
55
100
60
3.1
1.3
–55 to +150
2.1
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDD6680S Rev D(W)

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