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PDF FDD6632 Data sheet ( Hoja de datos )
| Número de pieza | FDD6632 | |
| Descripción | N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2002
FDD6632
N-Channel Logic Level UltraFET® Trench Power MOSFET
30V, 9A, 90mΩ
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A
• Qg(TOT) (Typ) = 2.6nC, VGS = 5V
Formerly developmental type 83317
Applications
• DC/DC converters
• Qgd (Typ) = 0.8nC
• CISS (Typ) = 255pF
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD6632
Device
FDD6632
Package
TO-252AA
Reel Size
330mm
Ratings
30
±20
9
6
4
Figure 4
15
0.1
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
10 oC/W
100 oC/W
52 oC/W
Tape Width
16mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDD6632 Rev. B
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
500
100 CRSS = CGD
CISS = CGS + CGD
COSS ≅ CDS + CGD
10
VDD = 15V
8
6
VGS = 0V, f = 1MHz
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Capacitance vs Drain to Source
Voltage
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 9A
ID = 4A
0
012345
Qg, GATE CHARGE (nC)
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
50
VGS = 4.5V, VDD = 15V, ID = 6A
40
tr
30
tf
20
10
0
0
td(OFF)
td(ON)
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
Figure 13. Switching Time vs Gate Resistance
Test Circuits and Waveforms
40
VGS = 10V, VDD = 15V, ID = 6A
30 td(OFF)
20
tf
10
td(ON)
0 tr
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 14. Switching Time vs Gate Resistance
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 15. Unclamped Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
FDD6632 Rev. B
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
FASTr™
FRFET™
GlobalOptoisolator™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
SuperSOT™-3
CROSSVOLT™
DenseTrench™
DOME™
GTO™
HiSeC™
I2C™
Power247™
PowerTrench®
QFET™
SuperSOT™-6
SuperSOT™-8
SyncFET™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER®
TinyLogic™
TruTranslation™
UHC™
UltraFET®
FACT Quiet Series™ MICROWIRE™
FAST®
OPTOLOGIC®
SMART START™
SPM™
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDD6632 Rev. H5
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet FDD6632.PDF ] | |
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