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Fairchild Semiconductor - 20V N-Channel PowerTrench MOSFET

Numéro de référence FDD6512A
Description 20V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD6512A fiche technique
November 2001
FDD6512A/FDU6512A
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
DC/DC converter
Motor drives
Features
36 A, 20 V
RDS(ON) = 21 m@ VGS = 4.5 V
RDS(ON) = 31 m@ VGS = 2.5 V
Low gate charge (12 nC typical)
Fast switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-A25K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
20
± 12
36
10.7
100
43
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6512A
FDD6512A
D-PAK (TO-252)
FDU6512A
FDU6512A
I-PAK (TO-251)
Reel Size
13’’
Tube
3.5
40
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2001 Fairchild Semiconductor Corp.
FDD6512A/FDU6512A Rev B (W)

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